Silicon Carbide. Volume 1: Growth Defects and Novel Applications (Группа авторов); John Wiley & Sons Limited

This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. The list of contributors reads like a «Who's Who» of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development.

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Параметр	Значение
ISBN	978-3-527-62906-0
Автор(ы)	Группа авторов
Издатель	John Wiley & Sons Limited